Properties of AlN films deposited by reactive ion-plasma sputtering

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• 作者：N. A. Bert ; A. D. Bondarev ; V. V. Zolotarev ; D. A. Kirilenko…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：49
• 期：10
• 页码：1383-1387
• 全文大小：1,092 KB
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• 作者单位：N. A. Bert (1)
  A. D. Bondarev (1)
  V. V. Zolotarev (1)
  D. A. Kirilenko (1)
  Ya. V. Lubyanskiy (1)
  A. V. Lyutetskiy (1)
  S. O. Slipchenko (1)
  A. N. Petrunov (1)
  N. A. Pikhtin (1)
  K. R. Ayusheva (1)
  I. N. Arsentyev (1)
  I. S. Tarasov (1)
  
  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The properties of SiO₂, Al₂O₃, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film. Original Russian Text ? N.A. Bert, A.D. Bondarev, V.V. Zolotarev, D.A. Kirilenko, Ya.V. Lubyanskiy, A.V. Lyutetskiy, S.O. Slipchenko, A.N. Petrunov, N.A. Pikhtin, K.R. Ayusheva, I.N. Arsentyev, I.S. Tarasov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 10, pp. 1429-433.