Enhanced Thermoelectric Properties of La-Doped ZrNiSn Half-Heusler Compound
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- 作者：Rizwan Akram ; Qiang Zhang ; Dongwang Yang ; Yun Zheng…
- 关键词：Half ; Heuslers ; defects ; composite materials
- 刊名：Journal of Electronic Materials
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：44
- 期：10
- 页码：3563-3570
- 全文大小：2,136 KB
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Qiang Zhang (1)
Dongwang Yang (1)
Yun Zheng (1)
Yonggao Yan (1)
Xianli Su (1)
Xinfeng Tang (1)
1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
文摘
The effect of La doping on ZrNiSn half-Heusler (HH) compound has been studied to explore the composition variation and structural modifications for improvement of its thermoelectric performance. A series of La x Zr1?em class="EmphasisTypeItalic ">x NiSn (x = 0, 0.005, 0.01, 0.015, 0.02, 0.03) alloys were prepared by induction melting combined with plasma-activated sintering. Structural analysis using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) confirmed the resulting material to be a composite of HH, NiZr, and La3Sn4-type phases. The volume fraction for the phases other than HH ranged from 1.5% to 25% with increasing La content, as estimated by Rietveld analysis. The solubility of La in ZrNiSn is estimated to be 1.5%. Point defects may play a significant role in carrier and phonon transport. Interestingly, the thermoelectric transport properties exhibited a considerable increase in electrical conductivity σ with La doping and a significant drop in thermal conductivity κ, leading to a thermoelectric figure of merit (ZT) of 0.53 at 923 K, representing an improvement of about 37% compared with the undoped sample. Keywords Half-Heuslers defects composite materials