Impact of indium mole fraction on the quantum transport of ultra-scaled In x Ga1–x As double-gate Schottky MOSFET: tight-binding approach
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- 作者：Zahra Ahangari
- 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：122
- 期：2
- 全文大小：1,272 KB
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1. Young Researchers and Elite Club, Yadegar- e- Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University, Tehran, Iran - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-0630
文摘
This paper explores the impact of indium mole fraction on the electrical characteristic of In x Ga1–x As double-gate Schottky MOSFET (SBFET) in nanoscale regime. A 20-band sp 3 d 5 s * tight-binding formalism is applied to compute the bandstructure of ultra-thin body structure as a function of indium mole fraction. The injection velocity of carriers is increased as the indium mole fraction approaches to x = 1. Quantum confinement results in an increment of the effective Schottky barrier height especially for the increased values of indium mole fraction. The ultra-scaled In x Ga1–x As SBFET suffers from a low conduction band DOS in the Γ valley that results in serious degradation of the gate capacitance. The electrical characteristic of this device is considered by solving self-consistent 2D Schrődinger–Poisson equations based on non-equilibrium Green’s function formalism. For channel thicknesses where the effect of quantum confinement on the gate capacitance is not dominant, shrinking the channel thickness besides increasing the indium mole fraction improves the electrical characteristic of the device. However, for the ultra-scaled structure, the indium mole fraction enhancement degrades the device performance due to the enhanced value of Schottky barrier height and low DOS.