Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
详细信息 查看全文
- 作者：D. V. Andreev ; G. G. Bondarenko ; A. A. Stolyarov
- 刊名：Inorganic Materials: Applied Research
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：7
- 期：2
- 页码：187-191
- 全文大小：327 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Inorganic Chemistry
Russian Library of Science
Industrial Chemistry and Chemical Engineering - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：2075-115X
- 卷排序：7
文摘
The processes of changing the charge state of metal–oxide–semiconductor (MOS) structures that contain a multilayer gate dielectric on the basis of a thermal SiO2 film doped with phosphorus under the influence of high-field electron injection are investigated. It is determined that a negative charge accumulating in a thin phosphosilicate glass (PSG) film of MOS structures containing a SiO2–PSG two-layer gate dielectric under high-field tunneling injection of electrons can be used for the correction of the threshold voltage, for the enhancement of the charge stability, and for an increase in the breakdown voltage of devices with MOS structure. It is shown that the density of electron traps increases with an increase in the thickness of the PSG film containing them, while their capture cross section remains unchanged. The method for the modification of the electrophysical characteristics of MOS structures by the high-field tunneling injection of electrons into a dielectric under a controlled current load is proposed. The method allows one to control changes in the parameters of MOS structures directly in the process of their modification. It is established that a MOS structure with a high thermal field stability can be obtained by its annealing at 200°C after the modification of its charge state by the electron injection.KeywordsMOS structuredielectric filmphosphosilicate glasshigh electric fieldsinjection currentmodification