Heterosegregation on the surface of a gallium arsenide single crystal: Gallium nitride phase formation in nitrogen- and argon-gas flows

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• 作者：Yu. Ya. Tomashpolsky ; V. M. Matyuk…
• 关键词：heterosegregation ; high ; resolution scanning electron microscopy ; optical digital microscopy ; gallium arsenide
• 刊名：Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
• 出版年：2015
• 出版时间：May 2015
• 年：2015
• 卷：9
• 期：3
• 页码：581-589
• 全文大小：5,748 KB
• 参考文献：1.Yu. Ya. Tomashpolsky, Surface Automatic Segregation in Chemical Compounds (Nauchnyi mir, Moscow, 2013) [in Russian].
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• 作者单位：Yu. Ya. Tomashpolsky (1)
  V. M. Matyuk (1)
  N. V. Sadovskaya (1)
  
  1. Karpov Institute of Physical Chemistry, State Scientific Center of the Russian Federation, Moscow, 105064, Russia
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Surfaces and Interfaces and Thin Films
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1819-7094

文摘

The possibilities of heterosegregation for generating surface phases are investigated by synthesizing the GaN phase on a GaAs single-crystal surface. The new phase is created for the first time on a gallium arsenide surface as a result of autosegregation during which gaseous nitrogen or argon with nitrogen and hydrogen admixtures is pumped through the appearing layer of liquid gallium at temperatures of 970-050°C. The nanomorphology and elemental and phase compositions of the GaN surface layer formed by surface reactions are characterized via high-resolution scanning electron microscopy, optical digital microscopy, and X-ray spectrum microanalysis.