Microstrip antenna–generator based on gallium arsenide

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• 作者：V. E. Lyubchenko ; T. A. Bryantseva…
• 刊名：Journal of Communications Technology and Electronics
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：61
• 期：8
• 页码：949-951
• 全文大小：351 KB
• 刊物类别：Engineering
• 刊物主题：Communications Engineering and Networks
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1555-6557
• 卷排序：61

文摘

A design of the microstrip antenna with an epitaxial structure used as a dielectric substrate is developed. The epitaxial structure contains a thin layer of n-type gallium arsenide of on a GaAs semi-insulating substrate. The layer thickness is selected with consideration for the carrier depletion region that appears at the interface between the metal layer, which forms the antenna, and the doped semiconductor layer. We demonstrated experimentally the possibility of application of this design as a FET antenna–generator in a frequency range of 10–15 GHz.Original Russian Text © V.E. Lyubchenko, T.A. Bryantseva, I.A. Markov, D.E. Radchenko, E.O. Yunevich, 2016, published in Radiotekhnika i Elektronika, 2016, Vol. 61, No. 8, pp. 824–826.