Kinetics of the interaction between a CCl₂F₂ radio-frequency discharge and gallium arsenide

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• 作者：S. A. Pivovarenok ; A. V. Dunaev ; D. B. Murin
• 刊名：Russian Microelectronics
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：45
• 期：5
• 页码：345-349
• 全文大小：795 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1608-3415
• 卷排序：45

文摘

Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.