Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors
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- 作者：Bhagwan Ram Raad ; Dheeraj Sharma ; Kaushal Nigam…
- 关键词：Band ; to ; band tunneling ; ON ; state current ; Ambipolar conduction ; Subthreshold slope ; Group III–V materials
- 刊名：Journal of Computational Electronics
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：16
- 期：1
- 页码：24-29
- 全文大小：
- 刊物类别：Engineering
- 刊物主题：Appl.Mathematics/Computational Methods of Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering;
- 出版者：Springer US
- ISSN：1572-8137
- 卷排序：16
文摘
A distinct materials combination is presented for tunnel field-effect transistors (TFETs): gallium arsenide phosphide (GaAsP) as a wider-bandgap material in the drain and channel regions with indium gallium arsenide (InGaAs) as a narrow-bandgap material for the source region. The introduction of this novel materials combination greatly improves the ON-state current, OFF-state current, ambipolar behavior, threshold voltage, and subthreshold slope compared with other group III–V ternary heterojunction TFETs. In GaAsP–InGaAs TFETs, the ambipolar current remains equal to the OFF-state current. This paper explores the potential of the proposed device for ultralow-power high-performance applications.