A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology
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  • 作者:Jawdat Abu-Taha ; Metin Yazgi
  • 关键词:Transimpedance amplifier (TIA) ; Negative impedance (NI) circuit ; Active inductor (AI) ; Input ; referred noise $$\left( {\overline{{I_{in}^{2} }} } \right)$$ I i n 2 ¯ ; Bandwidth extension
  • 刊名:Analog Integrated Circuits and Signal Processing
  • 出版年:2016
  • 出版时间:March 2016
  • 年:2016
  • 卷:86
  • 期:3
  • 页码:429-438
  • 全文大小:2,776 KB
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  • 作者单位:Jawdat Abu-Taha (1)
    Metin Yazgi (1)

    1. Department of Electrical & Electronics Engineering, Istanbul Technical University, Maslak, Istanbul, Turkey
  • 刊物类别:Engineering
  • 刊物主题:Circuits and Systems
    Electronic and Computer Engineering
    Signal,Image and Speech Processing
  • 出版者:Springer Netherlands
  • ISSN:1573-1979
文摘
This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches −3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is \(5.9\;{\text{pA/}}\sqrt {\text{Hz}}\). The power consumption is 29 mW. The TIA occupies \(230\;\upmu {\text{m}} \times 45\;\upmu {\text{m}}\) of area. Keywords Transimpedance amplifier (TIA) Negative impedance (NI) circuit Active inductor (AI) Input-referred noise \(\left( {\overline{{I_{in}^{2} }} } \right)\) Bandwidth extension

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