刊名:Analog Integrated Circuits and Signal Processing
出版年:2016
出版时间:March 2016
年:2016
卷:86
期:3
页码:429-438
全文大小:2,776 KB
参考文献:1.Park, S. M., & Yoo, H.-J. (2004). 1.25-Gb/s regulated cascode CMOS transimpedance amplifier for gigabit ethernet applications. IEEE Journal of Solid-State Circuits, 39(1), 112–121.CrossRef MathSciNet 2.Lee, H., & Mok, P. K. T. (2003). Active-feedback frequency-compensation technique for low-power multistage amplifiers. IEEE Journal of Solid-State Circuits, 38(3), 511–520.CrossRef 3.Jungwon, H., Booyoung, C., Mikyung, S., Jisook, Y., Dongmyung, L., Taewook, K., et al. (2010). A 20-Gb/s transformer-based current-mode optical receiver in 0.13 µm CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 57(5), 348–352.CrossRef 4.Jin, J.-D., & Hsu, S. S. H. (2008). 40-Gb/s transimpedance amplifier in 0.18 µm CMOS technology. IEEE Journal of Solid-State Circuits, 43(6), 1449–1457.CrossRef 5.Taghavi, M.H., Belostotski, L., & Haslett, J.W. (2012) A bandwidth enhancement technique for CMOS TIAs driven by large photodiodes. In 2012 IEEE 10th international on new circuits and systems conference (NEWCAS) (pp. 433–436). 6.Momeni, O., Hashemi, H., & Afshari, E. (2010). A 10-Gb/s Inductorless Transimpedance Amplifier. IEEE Transactions on Circuits and Systems II: Express Briefs, 57(12), 926–930.CrossRef 7.Sung Min, P. & Toumazou, C. (2000). A packaged low-noise high-speed regulated cascode transimpedance amplifier using a 0.6 µm N-well CMOS technology. In Proceedings of the 26rd european solid-state circuits conference, 2000. ESSCIRC ‘00 (pp. 431–434). 8.Jaeseo, L., Seong-Jun, S. Sung Min, P., Choong-Mo, N., Young-Se, K., & Hoi-Jun, Y. (2002). A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications In Digest of technical papers 2002 IEEE international solid-state circuits conference, 2002 (ISSCC 2002) (Vol. 441, pp. 80–447). 9.Zand, B., Khoman, P., Johns, D.A. (2001) A transimpedance amplifier with DC-coupled differential photodiode current sensing for wireless optical communications. In 2001 IEEE conference on custom integrated circuits (pp. 455–458). 10.Razavi, B. (2012). Design of integrated circuits for optical communications. New York: Wiley. 11.Wu, C.-H., Lee, C.-H., Chen., W.-S., & Liu., S.-I. (2005). CMOS wideband amplifiers using multiple inductive-series peaking technique. IEEE Journal of Solid-State Circuits, 40(2), 548–552.CrossRef 12.Thanachayanont, A., & Payne, A. (1996). VHF CMOS integrated active inductor. Electron Letters, 32(11), 999–1000.CrossRef 13.Yue, W., Xiaohui, D., Ismail, M., & Olsson, H. (2003). RF bandpass filter design based on CMOS active inductors. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 50(12), 942–949.CrossRef 14.Zhiqiang, G., Mingyan, Y., Yizheng, Y., Jianguo, M. (2005). Wide tuning range of a CMOS RF bandpass filter for wireless applications. In 2005 IEEE conference on electron devices and solid-state circuits (pp. 53–56). 15.Sae-Ngow, S. & Thanachayanont, A. (2003). A low-voltage, wide dynamic range CMOS floating active inductor. In TENCON 2003: conference on convergent technologies for the asia-pacific region (Vol. 1464, pp. 1460–1463). 16.Thanachayanont, A. (2002). CMOS transistor-only active inductor for IF/RF applications. In IEEE international conference on industrial technology, 2002 (IEEE ICIT ‘02) (Vol. 1202, pp. 1209–1212. 17.Allidina, K. & Mirabbasi, S. (2006). A widely tunable active RF filter topology. In Proceedings of the 2006 IEEE international symposium on circuits and systems, 2006 (ISCAS 2006) 18.Akbari-Dilmaghani, R., Payne, A., & Toumazou, C. (1998). A high Q RF CMOS differential active inductor. In 1998 IEEE international conference on electronics, circuits and systems (Vol. 153, pp. 157–160). 19.Thanachayanont, A., & Payne, A. (2000). CMOS floating active inductor and its applications to bandpass filter and oscillator designs. IEE Proceedings-Circuits, Devices and Systems, 147(1), 42–48.CrossRef 20.Grozing, M., Pascht, A., & Berroth, M. (2001). A 2.5 V CMOS differential active inductor with tunable L and Q for frequencies up to 5 GHz. In 2001 IEEE MTT-S international microwave symposium digest (Vol. 571, pp. 575–578). 21.Xu, Z., Huang, B., & Chen, H. (2009). 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications. Journal of Semiconductors, 30(10), 105005.CrossRef 22.Sansen, W. M. C., & Chang, Z. Y. (1991). Low-noise wide-band amplifiers in bipolar and CMOS technologies. New York: Springer. 23.Yazgi, M. & Abu-Taha, J. (2015). A 6.03 GHz low power transimpedance amplifier TIA in CMOS 0.18 µm technology. International Journal of Emerging Technology and Advanced Engineering (IJETAE), 5(2), 37–46. 24.Aitchison, S. (1985). The intrinsic noise figure of the MESFET distributed amplifier. IEEE Transactions on Microwave Theory and Techniques, 33(6), 460–466.CrossRef 25.Liu, L., Zou, J., Ma, N., Zhu, Z., & Yang, Y. (2015). A CMOS transimpedance amplifier with high gain and wide dynamic range for optical fiber sensing system. Optik-International Journal for Light and Electron Optics, 126(15), 1389–1393.CrossRef 26.Raut, R. & Ghasemi, O. (2008). A power efficient wide band trans-impedance amplifier in sub-micron CMOS integrated circuit technology. In 2008 Joint 6th international IEEE northeast workshop on circuits and systems and TAISA conference, 2008 (NEWCAS-TAISA 2008) (pp. 113–116). 27.Jun-De, J. & Hsu, S.S.H. (2006). 40-Gb/s transimpedance amplifier in 0.18 µm CMOS technology. In Proceedings of the 32nd european solid-state circuits conference, 2006 (ESSCIRC 2006) (pp. 520–523). 28.Sangirov, J., Ukaegbu, I.A., Nguyen, N.T.H., Lee, T.-W., Cho, M.-H. & Park, H.-H. (2014). Design of small-area transimpedance optical receiver module for optical interconnects. In Advanced Communication Technology (ICACT), 2014 16th International Conference (pp. 283–289). doi:10.1109/ICACT.2014.6779184 . 29.Ngo, T. H., & Park, H. H. (2011). 4.1 mW 50 dBΩ 10 Gbps transimpedance amplifier for optical receivers in 0.13 μm CMOS. Microwave and Optical Technology Letters, 53(2), 448–451.CrossRef MathSciNet 30.Lu, Z., Chen, D., Yeo, K.S. (2009). An inductor-less broadband design technique for transimpedance amplifiers. In Proceedings of the 2009 12th international symposium on integrated circuits, 2009 (ISIC ‘09) (pp. 232–235). 31.Seng, C. W., Sern, T.Y., Seng, Y.K. (2013). A low power wideband differential transimpedance amplifier for optical receivers in 0.18 µm CMOS. In 2013 IEEE 11th international new circuits and systems conference (NEWCAS) (pp. 1–4).
作者单位:Jawdat Abu-Taha (1) Metin Yazgi (1)
1. Department of Electrical & Electronics Engineering, Istanbul Technical University, Maslak, Istanbul, Turkey
刊物类别:Engineering
刊物主题:Circuits and Systems Electronic and Computer Engineering Signal,Image and Speech Processing
出版者:Springer Netherlands
ISSN:1573-1979
文摘
This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches −3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is \(5.9\;{\text{pA/}}\sqrt {\text{Hz}}\). The power consumption is 29 mW. The TIA occupies \(230\;\upmu {\text{m}} \times 45\;\upmu {\text{m}}\) of area. Keywords Transimpedance amplifier (TIA) Negative impedance (NI) circuit Active inductor (AI) Input-referred noise \(\left( {\overline{{I_{in}^{2} }} } \right)\) Bandwidth extension