X-ray DC response of a simple photoconductive detector based on CdZnTe film

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• 作者：Jun Tao ; Haitao Xu ; Yuelu Zhang ; Hua Meng…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：27
• 期：1
• 页码：645-650
• 全文大小：1,726 KB
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• 作者单位：Jun Tao (1)
  Haitao Xu (1)
  Yuelu Zhang (1)
  Hua Meng (1)
  Huanhuan Ji (1)
  Huang Jian (1)
  Run Xu (1)
  Linjun Wang (1)
  Yicheng Lu (2)
  
  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
  2. Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, 08854-8058, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

CdZnTe thin films were deposited on glass substrates by close-spaced sublimation method and then annealed in vacuum. The structure, morphology and composition are investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, respectively. The CdZnTe film detector shows a linear X-ray response, which is about one order of magnitude lower than that of the single crystalline CdZnTe sample. The mobility and lifetime product of the CdZnTe film is estimated to be around 6.5 × 10−6cm2/V. Time dependent X-ray response shows the increase of photocurrent with time at the first 20 min for the film detector, indicating a filling of traps in the forbidden gap.