Investigation of Characteristics of Al2O3/n-In x Ga1?em class="a-plus-plus">

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• 作者：Hai-Dang Trinh (1)
  Yueh-Chin Lin (1)
  Chien-I Kuo (1)
  Edward Yi Chang (1) (2)
  Hong-Quan Nguyen (1)
  Yuen-Yee Wong (1)
  Chih-Chieh Yu (3)
  Chi-Ming Chen (4)
  Chia-Yuan Chang (4)
  Jyun-Yi Wu (4)
  Han-Chin Chiu (4)
  Terrence Yu (4)
  Hui-Cheng Chang (4)
  Joseph Tsai (4)
  David Hwang (4)
  
• 关键词：ALD Al2O3 ; surface treatment ; InGaAs ; InAs ; MOSCAPs
• 刊名：Journal of Electronic Materials
• 出版年：2013
• 出版时间：August 2013
• 年：2013
• 卷：42
• 期：8
• 页码：2439-2444
• 全文大小：685KB
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• 作者单位：Hai-Dang Trinh (1)
  Yueh-Chin Lin (1)
  Chien-I Kuo (1)
  Edward Yi Chang (1) (2)
  Hong-Quan Nguyen (1)
  Yuen-Yee Wong (1)
  Chih-Chieh Yu (3)
  Chi-Ming Chen (4)
  Chia-Yuan Chang (4)
  Jyun-Yi Wu (4)
  Han-Chin Chiu (4)
  Terrence Yu (4)
  Hui-Cheng Chang (4)
  Joseph Tsai (4)
  David Hwang (4)
  
  1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
  2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
  3. Instrument Technology Research Center, Hsinchu, 30010, Taiwan
  4. Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, Hsinchu, 30010, Taiwan
  

文摘

The electrical properties of Al2O3/n-InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage (C-em class="a-plus-plus">V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-em class="a-plus-plus">V hysteresis are observed. The reduction of C-em class="a-plus-plus">V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.