Effect of solution concentration on the properties of Cu₂ZnSnS₄ nanocrystalline thin films prepared by microwave irradiation

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• 作者：Wanku Tao ; Aixiang Wei ; Yu Zhao ; Jun Liu…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：28
• 期：4
• 页码：3407-3414
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

In this paper, Cu₂ZnSnS₄ (CZTS) thin films were directly grown on the transparent conductive fluorine-doped tin oxide (FTO) substrates by microwave irradiation solution method. The influences of precursor concentration and thiourea concentration on the crystallographic structure, morphology and optical properties were studied using X-ray diffraction, Raman spectroscopy, scanning electronic microscope, transmission electron microscopy and UV–Vis spectrophotometer. Results revealed that the CZTS thin films were selectively deposited only on the conductive side of substrates. The CZTS thin films are in the kesterite structure with a little binary and ternary impurities phases and composed of sphere-like particles. The optical band gap of the CZTS thin films is in the range of 1.27–1.54 eV. The similar tetragonal structure between the FTO substrate and Cu₂ZnSnS₄, suitable electrical conductivity and surface roughness are critical to promoting the epitaxial nucleation and growth of the Cu₂ZnSnS₄ thin films on FTO substrates.