Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

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• 作者：Shirong Zhao ; Heather McFavilen ; Shuo Wang…
• 关键词：Ni/Au ohmic contacts ; p ; type GaN ; specific contact resistivity ; high ; temperature electronics
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2087-2091
• 全文大小：1,301 KB
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• 作者单位：Shirong Zhao (1)
  Heather McFavilen (2)
  Shuo Wang (3)
  Fernando A. Ponce (3)
  Chantal Arena (2)
  Stephen Goodnick (1)
  Srabanti Chowdhury (1)
  
  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA
  2. Soitec Phoenix Labs, Tempe, AZ, 85284, USA
  3. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρ _c) and sheet resistance (R _sh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρ _c was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρ _c was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρ _c. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.