Deposition mechanism and characterizations of CuInS2 film prepared by one-step electro-deposition

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• 作者：Libo Li ; Guanxiong Gao ; Qi Li ; Yue Ma…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：27
• 期：2
• 页码：2108-2113
• 全文大小：2,441 KB
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• 作者单位：Libo Li (1)
  Guanxiong Gao (1)
  Qi Li (1)
  Yue Ma (1)
  Jun You (1)
  Changfa Liu (1)
  Heng Wang (1)
  
  1. Key Laboratory of Green Chemical Engineering and Technology of College of Heilongjiang Province, College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin, 150040, People’s Republic of China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

CuInS₂ films had been prepared on FTO using a one-step deposition method, with sodium citrate complexing agent. The film was deposited from the solution containing 20 mmol L−1 CuSO₄, 7.5 mmol L−1 In₂S₃O₁₂, 75 mmol L−1 Na₂S₂O₃ and 8.5 mmol L−1 Na₃C₆H₅O₇ for 1200 s. The films were characterized by the UV–visible absorption spectroscopy, SEM, AFM, XRD, XPS methods. By the cyclic voltammetry curves of Cu, S, Cu–S, In, In–S, Cu–In–S, the mechanism of CuInS₂ deposition was gotten, that is, the reduction reaction of Cu and In occured, and then S was under potential deposition.