Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
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- 作者：Sergio Bietti ; Luca Esposito ; Alexey Fedorov ; Andrea Ballabio…
- 关键词：Droplet epitaxy ; InAs quantum dots ; GaAs(111)A
- 刊名：Nanoscale Research Letters
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：10
- 期：1
- 全文大小：1,498 KB
- 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
- 出版者：Springer US
- ISSN：1556-276X
文摘
We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.