Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures
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- 作者：Saimon Filipe Covre da Silva ; Thayná Mardegan…
- 关键词：Strain ; free quantum dots ; Local hole etching ; Ga ; assisted deoxidation ; Molecular beam epitaxy
- 刊名：Nanoscale Research Letters
- 出版年：2017
- 出版时间：December 2017
- 年：2017
- 卷：12
- 期：1
- 全文大小：5935KB
- 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
- 出版者：Springer US
- ISSN：1556-276X
- 卷排序：12
文摘
We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.