Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

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• 作者：A. Mesrane ; A. Mahrane ; F. Rahmoune ; A. Oulebsir
• 关键词：Band gap combination ; dual ; junction solar cell ; InGaN ; current match ; efficiency
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：46
• 期：3
• 页码：1458-1465
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the In_xGa_1−xN according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In_0.49Ga_0.51N/In_0.74Ga_0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In_0.49Ga_0.51N/In_0.74Ga_0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed.