Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact
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- 作者：A. V. Babichev ; H. Zhang ; N. Guan ; A. Yu. Egorov ; F. H. Julien…
- 刊名：Semiconductors
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：50
- 期：8
- 页码：1097-1101
- 全文大小：3,483 KB
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Magnetism and Magnetic Materials
Electromagnetism, Optics and Lasers
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1090-6479
- 卷排序：50
文摘
We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In0.18Ga0.82N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.Original Russian Text © A.V. Babichev, H. Zhang, N. Guan, A.Yu. Egorov, F.H. Julien, A. Messanvi, C. Durand, J. Eymery, M. Tchernycheva, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1118–1122.