Resistive switching and diode properties of mesoscopic niobium oxide-based structures

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• 作者：N. A. Tulina ; A. N. Rossolenko…
• 刊名：Bulletin of the Russian Academy of Sciences: Physics
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：79
• 期：6
• 页码：759-762
• 全文大小：264 KB
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• 作者单位：N. A. Tulina (1)
  A. N. Rossolenko (1)
  I. Yu. Borisenko (3)
  I. M. Shmytko (1)
  A. M. Ionov (1)
  A. A. Ivanov (2)
  
  1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia
  3. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia
  2. National Research Nuclear University (MEPhI), Moscow, 115409, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Nuclear Physics, Heavy Ions and Hadrons
  Russian Library of Science
  
• 出版者：Allerton Press, Inc. distributed exclusively by Springer Science+Business Media LLC
• ISSN：1934-9432

文摘

The bipolar effects of resistive switching (BRS) in mesoscopic heterostrucures based on amorphous and crystalline niobium oxide films are considered. The BRS effect is more pronounced in the structures based on multiphase nanocrystalline niobium oxide films. It is shown that the threshold frequency for observing the BRS effect is of the order of 104 Hz. Switching is controlled via oxygen electrodiffusion to vacancies as the doping level of the contact area and the resistive properties of the heterocontact change.