刊物主题:Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
出版者:Springer US
ISSN:1572-817X
卷排序:49
文摘
This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vectors. In the same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients for electrons and holes and the gradient of temperature on the physical parameters of the heterostructure is taken into account.