Analysis, design and implementation of SiGe wideband dual-feedback low noise amplifier

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• 作者：Wei Zhang (1)
  Bo Song (1)
  Jun Fu (2) (3)
  Yudong Wang (2) (3)
  Jie Cui (2)
  Gaoqing Li (2)
  Wei Zhang (2)
  Zhihong Liu (2) (3)
  
• 关键词：wideband ; dual ; feedback ; low noise amplifier (LNA) ; SiGe heterojunction bipolar transistor
• 刊名：Transactions of Tianjin University
• 出版年：2014
• 出版时间：August 2014
• 年：2014
• 卷：20
• 期：4
• 页码：299-309
• 全文大小：824 KB
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• 作者单位：Wei Zhang (1)
  Bo Song (1)
  Jun Fu (2) (3)
  Yudong Wang (2) (3)
  Jie Cui (2)
  Gaoqing Li (2)
  Wei Zhang (2)
  Zhihong Liu (2) (3)
  
  1. School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China
  2. Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
  3. Tsinghua National Laboratory for Information Science and Technology, Beijing, 100084, China
  
• ISSN：1995-8196

文摘

A wideband dual-feedback low noise amplifier (LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor (HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than 0 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1dB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.