mm-Wave noise modeling in advanced SiGe and InP HBTs
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- 作者：P. Sakalas ; M. Schroter ; H. Zirath
- 关键词：Compact modeling ; HICUM ; InP/InGaAs HBT ; Si/SiGe HBT ; Noise parameters ; mm ; Wave HBT
- 刊名：Journal of Computational Electronics
- 出版年：2015
- 出版时间：March 2015
- 年：2015
- 卷：14
- 期：1
- 页码：62-71
- 全文大小：1,093 KB
- 参考文献：1. Driad, R, Makon, RE, Hurn, V, Benkhelifa, F, L?sch, R, Rosenzweig, J, Schlechtweg, M (2009) InP-based DHBT technology for high-speed mixed signal and digital applications. IPRM 09: pp. 10-15
2. Urteaga, M., Seo, M., Hacker, J., Griffith, Z., Young, A., Pierson, R., Rowell, P., Akalare, A., Jain, V., Lobisser, E., Rodwell, M.J.W.: InP HBTs for THz frequency integrated circuits. In: 23rd International Conference of IPRM (2011)
3. Urteaga, M., Pierson, R., Rowell, P., Jain, V., Lobisser, E., Rodwell, M.J.W.: 130 nm InP DHBTs with 130 nm InP DHBTs with f \(_{{\rm T}} > 0.52\) THz and f \(_{{\rm max}} >1.1\) THz. In: 69th Annual device research conference, pp. 281-82 (2011)
4. Snodgrass, W., Hafez, W., Harff, N., Feng, M.: Pseudomorfic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating f \(_{{\rm T}} =765\) GHz at \(25^{\circ }\) C increasing to f \(_{{\rm T}}=845\) GHz at \(-55^{\circ }\) C. In: IEDM-6 (2006)
5. Feng, M., Snodgrass, W.: InP pseudomorphic heterojunction bipolar transistor (PHBT) with f \(_{T}>750\) GHz. In: 19 International conference IPRM-4, pp. 399-02 (2007)
6. Lobisser, E., Griffith, Z., Jain, V., Thibeault, B.J., Rodwell, M.J.W.: 200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating f \(_{{\rm max}}>800\) GHz and f \(_{{\rm T}}=360\) GHz. In: IEEE IPRM, pp. 16-9 (2009)
7. Liu, H.G., Ostinelli, Y., Zeng, Y., Bolognesi, C.R.: 600 GHz InP/GaASb/InP DHBTs grown by MOCVD with a Ga(As, Sb) graded-base and f \(_{{\rm T}} \times BV_{{\rm CE0}} > 2.5\) THz-V at room temperature. IEDM 2007, 667-70 (2007)
8. Rücker, H., Heinemann, B., Winkler, W., Barth, R., Bongr?ber, J., Drews, J., Fischer, G.G., Fox, A., Grabolla, T., Haak, U., Knoll, D., Kornd?rfer, F., Mai, A., Marschmeyer, S., Schley, P., Schmidt, D., Schubert, M.A., Tillack, B., Wolanski, D., Yamamoto, Y.: A 0.13 \(\mu \) m SiGe BiCMOS technology featuring f \(_{{\rm T}}/\) f \(_{{\rm max}}\) of 240/330 GHz and gate delays below 3 ps. IEEE J. Solid-State Circuits 45(9), 1678-686 (2010)
9. Heinemann, B., Barth, R., Bolze, D., Drews, G., Fischer, G.G., Fox, A., Fursenko, O., Grabolla,T., Haak, U., Knoll, D., Kurps, R., Lisker, M., Marschmeyer, S., Rücker, H., Schmidt, D., Schubert, M., Tillack, R., Wipf, C., Wolansky, D., Yamamoto, Y.: SiGe HBT technology with f \(_{{\rm T}}/\) f \(_{{\rm max}}\) of 300 GHz/500 GHz and 2.0 ps CML gate delay. In: IEEE international electron device meeting, IEDM 2010, Technical Digest, pp. 688-91 (2010)
10. Rücker, H., Heinemann, B., Fox, A.: Half-Terahertz SiGe BiCMOS technology. In: IEEE 12th topical meeting on silicon monolithic integrated circuits in RF systems 2012, SiRF, 133-36 (2012)
11. Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montuclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.: \(0.13 {\upmu }\) m SiGe BiCMOS technology fully dedicated to mm-wave applications. IEEE J. Solid- State Circuits 44< - 刊物类别：Engineering
- 刊物主题：Electronic and Computer Engineering
Optical and Electronic Materials
Mathematical and Computational Physics
Applied Mathematics and Computational Methods of Engineering
Mechanical Engineering - 出版者：Springer Netherlands
- ISSN：1572-8137
文摘
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transistors (HBTs) were measured and modeled in a broad frequency range. Equations for systematically modeled correlated noise in bipolar transistors and their implementation in the compact models HICUM/L0 and L2 are proposed. The models are verified for advanced SiGe HBTs up to 300?GHz by hydrodynamic device simulation and by results from the Boltzmann transport equation. The verified model was used for analyzing the noise of advanced InP/InGaAs and Si/SiGe HBTs. Compared to Si/SiGe HBTs a higher noise at lower frequencies was observed in InP/InGaAs HBTs due to a higher base recombination current. InP HBTs shows a good noise performance beyond 100?GHz and due to their better \(f_{\mathrm{T}}\,\times ~BV_{\mathrm{CE0}}\) product can compete with advanced Si/SiGe HBTs for LNA design at mm-wave frequencies.