THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

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• 作者：Janusz Grzyb ; Ullrich Pfeiffer
• 关键词：CMOS THz camera ; CMOS detector arrays ; SiGe HBT detector arrays ; On ; chip antennas ; THz heterodyne receiver arrays ; Multi ; color imaging ; Nanoscale silicon technologies ; Video ; mode operation ; Readout circuitry (ROIC)
• 刊名：International Journal of Infrared and Millimeter Waves
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：36
• 期：10
• 页码：998-1032
• 全文大小：4,474 KB
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• 作者单位：Janusz Grzyb (1)
  Ullrich Pfeiffer (1)
  
  1. Institute for High-Frequency and Communication Technology, Rainer-Grünter-Strasse 21, D-42119, Wuppertal, Germany
  
• 刊物类别：Physics and Astronomy
• 刊物主题：None Assigned
• 出版者：Springer New York
• ISSN：1866-6906

文摘

The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support continuous-wave illumination without the need to synchronize the source with the camera (no lock-in receiver required). A systematic overview of the main advantages and limitations in using silicon technologies for THz applications is given. The on-chip antenna design challenges and co-design aspects with the active circuitry are thoroughly analyzed for broadband detector/receiver operation. A summary of the state-of-the-art arrays of broadband THz direct detectors based on two different operation principles is presented. The first is based on the non-quasistatic resistive mixing process in a MOSFET channel, whereas the other relies on the THz signal rectification by nonlinearity of the base-emitter junction in a high-speed SiGe heterojunction bipolar transistor (HBT). For the MOSFET detector arrays implemented in a 65 nm bulk CMOS technology, a state-of-the-art optical noise equivalent power (NEP) of 14 pW/\(\sqrt {Hz}\) at 720 GHz was measured, whereas for the HBT detector arrays in a 0.25 μm SiGe process technology, an optical NEP of 47 pW/\(\sqrt {Hz}\) at 700 GHz was found. Based on the implemented 1k-pixel CMOS camera with an average power consumption of 2.5 μW/pixel, various design aspects specific to video-mode operation are outlined and co-integration issues with the readout circuitry are analyzed. Furthermore, a single-chip 2 × 2 array of heterodyne receivers for multi-color active imaging in a 160-000 GHz band is presented with a well-balanced NEP across the operation bandwidth ranging from 0.1 to 0.24 fW/Hz (44.1-7.8 dB single-sideband NF) and an instantaneous IF bandwidth of 10 GHz. In its present implementation, the receiver RF bandwidth is not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, and 990 GHz. Keywords CMOS THz camera CMOS detector arrays SiGe HBT detector arrays On-chip antennas THz heterodyne receiver arrays Multi-color imaging Nanoscale silicon technologies Video-mode operation Readout circuitry (ROIC)