Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

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• 作者：Yi-Chen Wu ; Jung-Hui Tsai ; Te-Kuang Chiang ; Fu-Min Wang
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：49
• 期：10
• 页码：1361-1364
• 全文大小：315 KB
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• 作者单位：Yi-Chen Wu (1)
  Jung-Hui Tsai (2)
  Te-Kuang Chiang (1)
  Fu-Min Wang (1)
  
  1. Department of Electrical Engineering, National University of Kaohsiung, 700, Kaohsiung University Rd., 811, Kaohsiung, Taiwan
  2. Department of Electronic Engineering, National Kaohsiung Normal University, 802, Kaohsiung, Taiwan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

In this article the characteristics of In_0.49Ga_0.51P/GaAs/GaAs_0.975Bi_0.025 and In_0.49Ga_0.51P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightly smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base. The article is published in the original.