A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

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• 作者：Zhang Jincan ; Liu Bo ; Zhang Leiming…
• 关键词：Heterojunction bipolar transistors (HBTs) ; Parameter extraction ; Small ; signal equivalent circuit ; Peeling algorithm
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：85
• 期：3
• 页码：405-411
• 全文大小：1,042 KB
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  2.Yun, J., Yoon, D., Kim, H., et al. (2014). 300-GHz InP HBT oscillators based on common-base cross-coupled topology. IEEE Transactions on Microwave Theory and Techniques, 62(12), 3053-064.CrossRef
  3.Huang, W. C., Zhou, J. Y., & Chen, P. (2015). An X-band low phase noise free-running oscillator using substrate integrated waveguide dual-mode bandpass filter with circular cavity. IEEE Microwave and Wireless Components Letters, 25(1), 40-2.MathSciNet CrossRef
  4.Gobert, Y., Tasker, P. J., & Bachem, K. H. (1997). A physical, yet Simple, small-signal equivalent circuit for the heterojunction bipolar transistor. IEEE Transactions on Microwave Theory and Techniques, 45(1), 149-53.CrossRef
  5.Samelis, A., & Pavlidis, D. (1997). DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization. IEEE Transactions on Microwave Theory and Techniques, 45(6), 886-97.CrossRef
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  7.Voinigescu, S. P., Dacquay, E., Adinolfi, V., et al. (2012). Characterization and modeling of an SiGe HBT technology for transceiver applications in the 100-00-GHz range. IEEE Transactions on Microwave Theory and Techniques, 60(12), 4024-034.CrossRef
  8.Degachi, L., & Ghannouchi, F. M. (2008). An augmented small-signal HBT model with its analytical based parameter extraction technique. IEEE Transactions on Electron Devices, 55(4), 968-72.CrossRef
  9.Oudir, A., Mahdouani, M., & Bourguiga, R. (2011). Direct extraction method of HBT equivalent-circuit elements relying exclusively on S-parameters measured at normal bias conditions. IEEE Transactions on Microwave Theory and Techniques, 59(8), 1973-982.CrossRef
  10.Olvera-Cervantes, J. L., Cressler, J. D., Medina-Monroy, J. L., et al. (2008). A new analytical method for robust extraction of the small-signal equivalent circuit for SiGe HBTs operating at cryogenic temperatures. IEEE Transactions on Microwave Theory and Techniques, 56(3), 568-74.CrossRef
  11.Chen, H. Y., Chen, K. M., Huang, G. W., et al. (2006). Small-signal modeling of SiGe HBTs using direct parameter-extraction method. IEEE Transactions on Electron Devices, 53(9), 2287-295.CrossRef
  12.Degachi, L., & Ghannouchi, F. M. (2006). Systematic and rigorous extraction method of HBT small-signal model parameters. IEEE Transactions on Microwave Theory and Techniques, 54(2), 682-88.CrossRef
  13.Li, B., Prasad, S., Yang, L. W., et al. (1998). A semianalytical parameter-extraction procedure for HBT equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 46(10), 1427-435.CrossRef
  14.Costa, D., Liu, W. U., & Harris, J. S. (1991). Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor for small-signal equivalent circuit. IEEE Transactions on Electron Devices, 38(9), 2018-024.CrossRef
  
• 作者单位：Zhang Jincan (1)
  Liu Bo (1)
  Zhang Leiming (1)
  Sun Ligong (1)
  Wang Jinchan (1)
  Song Lu (1)
  
  1. Electrical Engineering College, Henan University of Science and Technology, Mail No. #60, No. 263 KaiYuan Road, Luoyang, China
  
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems
  Electronic and Computer Engineering
  Signal,Image and Speech Processing
  
• 出版者：Springer Netherlands
• ISSN：1573-1979

文摘

A new direct parameter-extraction technique applied to the small-signal equivalent circuit of heterojunction bipolar transistor (HBT) is presented. The method is based on first determining the parasitic elements and then the intrinsic elements analytically. Concerning the intrinsic parameters, all the elements are extracted using exact closed-form equations derived in terms of S-parameters by reducing the small-signal models to the simplified using peeling algorithm. The validity of the new extraction methodology is demonstrated by applying it to a 1 × 15 μm2 InP HBT device within the frequency range of 0.1-0 GHz. Keywords Heterojunction bipolar transistors (HBTs) Parameter extraction Small-signal equivalent circuit Peeling algorithm