Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

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• 作者：Seong Bin Lim ; Chan Hyuk Ji ; Kee Tae Kim…
• 刊名：Journal of the Korean Physical Society
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：69
• 期：3
• 页码：421-425
• 全文大小：565 KB
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524
• 卷排序：69

文摘

Photodiodes are widely used to convert light into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low sensitivity at visible wavelengths due to their absorption of infrared wavelengths. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity at visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) with a consisting of ITO/ NiO_x/ P3HT:PC₆₀BM/ YbF₃/Al structure. In the OPD, a yitterbium fluoride (YbF₃) buffer layer was used as the electron transport layer. The OPD was analyzed by using optical-electrical measurements to determine its J-V, detectivity, and dynamic characteristics. We investigated the physical effects of the YbF₃ buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.KeywordsOrganic photodiodePhotodetectorYtterbium fluorideP3HT: PCBM