Solution processed inorganic V₂O _x as interfacial function materials for inverted planar-heterojunction perovskite solar cells with enhanced efficiency

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• 作者：Haitao Peng ; Weihai Sun ; Yunlong Li ; Senyun Ye ; Haixia Rao ; Weibo Yan…
• 关键词：perovskite solar cells ; vanadium oxide ; hole transport layer ; band alignment ; hysteresis
• 刊名：Nano Research
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：9
• 期：10
• 页码：2960-2971
• 全文大小：2,315 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000
• 卷排序：9

文摘

An inverted planar heterojunction perovskite solar cell (PSC) is one of the most competitive photovoltaic devices exhibiting a high power conversion efficiency (PCE) and nearly free hysteresis in the voltage–current output. However, the band alignment between the transport materials and the perovskite absorber has not been optimized, resulting in a lower open-circuit voltage (V_oc) than that of regular PSCs. To address this issue, we tune the band alignment in perovskite photovoltaic architecture by introducing bilayer structured transport materials, e.g., the hole transport material poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/V₂O₅. In this study, solution processed inorganic V₂O_x interlayer is incorporated into PEDOT:PSS for achieving improved film surface properties as well as optical and electrical properties. For example, the work function (WF) was changed from 5.1 to 5.4 eV. A remarkably high PCE of 17.5% with nearly free hysteresis and a stabilized efficiency of 17.1% have been achieved. Electronic impedance spectra (EIS) demonstrate a significant increase in the recombination resistance after introducing the interlayer, associated with the high V_oc output value of 1.05 V. Transient photocurrent and photovoltage measurements indicate that a comparable charge transport process and an inhibited recombination process occur in the PSC with the introduction of the V₂O_x interlayer.