Characterization of ALD Processed Gallium Doped TiO2 Hole Blocking Layer in an Inverted Organic Solar Cell
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- 作者：Eun Ju Lee ; Sang Ouk Ryu
- 关键词：ALD ; inverted solar cell ; Ga doping ; hole blocking layer ; TiO2 ; PCE
- 刊名：Journal of Electronic Materials
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：46
- 期：2
- 页码：961-966
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
- 出版者：Springer US
- ISSN：1543-186X
- 卷排序：46
文摘
To improve power conversion efficiency (PCE) of inverted structure organic solar cells a buffer layer, a hole blocking layer (HBL) was introduced between cathode and active photovoltaic layer. Gallium (Ga) doped TiO2 as a HBL was fabricated by means of atomic layer deposition. X-ray photoelectron spectroscopy showed the highest Ga-Ti complex binding characteristics was achieved at 5% doping concentration. Gallium doped TiO2 layer exhibited over 94% of optical transmittance at the process temperature of 200°C. The resulting PCE of inverted structure organic solar cell having 5% doping in the hole block layer was 2.7%. The PCE was improved 35% compared to the cell without gallium doping.