Annealing effects on CuInS2 thin films grown on glass substrates by using pulsed laser deposition

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• 作者：Lei Zhang (1) (2)
  Jingang Fang (1)
  Mingkai Li (1)
  Xunzhong Shang (1)
  Yunbin He (1)
  Tae Won Kang (2)
  
• 关键词：CuInS2 thin films ; Pulsed laser deposition ; Annealing/sulfurization ; Raman
• 刊名：Journal of the Korean Physical Society
• 出版年：2014
• 出版时间：February 2014
• 年：2014
• 卷：64
• 期：3
• 页码：410-414
• 全文大小：322 KB
• 参考文献：1. J. Klaer, R. Klenk and H. W. Schock, Thin Solid Films 515, 5929 (2007). CrossRef
  2. T. T. John, K. C. Wilson, P. M. Ratheesh Kumar, C. Sudha Kartha, K. P. Vijayakumar, Y. Kashiwaba, T. Abe and Y. Yasuhiro, Physica Status Solidi (a) 202, 79 (2005). CrossRef
  3. K. L. Chopra, P. D. Paulson and V. Dutta, Prog. Photovolt. Res. Appl. 12, 69 (2004). CrossRef
  4. S. H. Chaki and A. Agarwal, J. Cryst. Growth 308, 176 (2007). CrossRef
  5. K. Siemer, J. Klaer, I. Luck, J. Bruns, R. Klenk and D. Braunig, Solar Energy Mater. Solar Cells 67, 159 (2001). CrossRef
  6. H. Metzner, T. Hahn, J. H. Bremer and J. Conrad, Appl. Phys. Lett. 69, 1900 (1996). CrossRef
  7. T. Hahn, H. Metzner, B. Plikat and M. Seibt, Appl. Phys. Lett. 72, 2733 (1998). CrossRef
  8. R. Hunger, R. Scheer, K. Diesner, D. Su and H. J. Lewerenz, Appl. Phys. Lett. 69, 3010 (1996). CrossRef
  9. Y. B. He, W. Kriegseis, B. K. Meyer, A. Polity and M. Serafin, Appl. Phys. Lett. 83, 1743 (2003). CrossRef
  10. Y. B. He, A. Krost, J. Blasing, W. Kriegseis, A. Polity, B. K. Meyer and C. Kisielowski, Thin Solid Films 451-52, 229 (2004). CrossRef
  11. A. Kobayashi, J. Ohta, Y. Kawaguchi and H. Fujioka, Appl. Phys. Lett. 89, 111918 (2006). CrossRef
  12. X. Z. Shang, J. G. Fang, L. Zhang, M. K. Li, G. Chang, P. Li and Y. B. He, J. Alloy. Compd. 553, 282 (2013). CrossRef
  13. Y. B. He, T. Kr?mer, A. Polity, M. Hardt and B. K. Meyer, Thin Solid Films 431-32, 126 (2003). CrossRef
  14. C. Camus, Ph.D. dissertation, Freie Universit?t Berlin (2008).
  15. E. Rudigier, B. Barcones, I. Luck, T. J. Colin, A. P. Rodrguez and R. Scheer, J. Appl. Phys. 95, 5153 (2004). CrossRef
  16. T. Unold, I. Sieber and K. Ellemer, Appl. Phys. Lett. 88, 213502 (2006). CrossRef
  17. S. H. Wei, L. G. Ferreira and A. Zunger, Phys. Rev. B 45, 2533 (1992). CrossRef
  18. S. H. Wei, S. B. Zhang and A. Zunger, Phys. Rev. B 59, R2478 (1999). CrossRef
  19. D. Y. Lee and J. Kim, Solar Energy Mater. Solar Cells 95, 245 (2011). CrossRef
  20. B. Barcones, A. P. Rodriguez, L. C. Barrio, A. R. Rodriguez, J. R. Morante, E. Rudigier, I. Luck, J. Djordjevic and R. Scheer, Thin Solid Films 480-81, 362 (2005). CrossRef
  21. Y. B. He, T. Kramer, A. Polity, R. Gregor, W. Kriegseis, I. Osterreicher, D. Hasselkamp and B. K. Meyer, Thin Solid Films 431-32, 231 (2003). CrossRef
  22. R. Scheer and H. J. Lewerenz, J. Vac. Sci. Technol. A 12, 51 (1994). CrossRef
  23. Y. B. He, Ph.D. dissertation, First Physics Institute of Giessen University, Germany (2003), and references therein.
  
• 作者单位：Lei Zhang (1) (2)
  Jingang Fang (1)
  Mingkai Li (1)
  Xunzhong Shang (1)
  Yunbin He (1)
  Tae Won Kang (2)
  
  1. Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, Faculty of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
  2. Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul, 100715, Korea
  
• ISSN：1976-8524

文摘

CuInS2 thin films have been deposited on glass substrates at low temperature by using a self-made ceramic target and the pulsed laser deposition method. Polycrystalline and near-stoichiometric CuInS2 films with a band gap energy of 1.45 eV are obtained by post-annealing/sulfurization at a temperature of 500 °C. X-ray diffraction reveals a highly (112) preferential orientation of the CuInS2 thin films while the Raman spectrum indicates the coexistence of a CuInS2 chalcopyrite phase and CuAu orderings. A polymorphic transformation of metastable CuAu ordering into the equilibrium chalcopyrite structure takes place at a post-annealing temperature of 500 °C with the CuxS phase being segregated at the surface. Further, the morphologies and the chemical states of the films before and after annealing are characterized by atomic force microscopy and X-ray photoelectron spectroscopy, respectively.