Contact and channel resistances of ballistic and non-ballistic carbon-nanotube field-effect transistors

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• 作者：Jong-Myeon Park ; Shin-Nam Hong
• 关键词：Carbon nanotube (CNT) ; Carbon ; nanotube field ; effect transistor (CNFET) ; Contact resistance ; Ballistic ; Non ; ballistic
• 刊名：Journal of the Korean Physical Society
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：68
• 期：2
• 页码：251-256
• 全文大小：914 KB
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• 作者单位：Jong-Myeon Park (1)
  Shin-Nam Hong (1)
  
  1. Department of Electronic Engineering, Korea Aerospace University, Goyang, 10540, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

Recently, many research has been conducted on the carbon-nanotube field-effect transistors (CNFETs) in expectation that the CNFETs could replace metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. In consideration of both ballistic conduction and nonballistic conduction, including elastic scattering, optical phonon scattering, and acoustic phonon scattering, this paper presents the simulated dependence of the coaxially-gated single-walled semiconducting CNFET characteristics on the contact and the channel lengths. When the contact length was longer than 100 nm, the CNFETs showed a constant minimal value of the contact resistance. In this case, the saturated drain current was higher than that of CNFETs with a shorter contact length. When the channel was longer than 600 nm, the channel resistance was significantly increased due to acoustic phonon scattering. When the channel was shorter than 200 - 250 nm with optical scattering, acoustic scattering or all three scattering mechanisms taken into account, the contact resistance began to become larger than channel resistance. Keywords Carbon nanotube (CNT) Carbon-nanotube field-effect transistor (CNFET) Contact resistance Ballistic Non-ballistic