Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 System
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- 作者：N. Ya. Zaitsev ; G. Ya. Krasnikov and I. V. Matyushkin
- 刊名：Russian Microelectronics
- 出版年：2000
- 出版时间：November 2000
- 年：2000
- 卷：29
- 期：6
- 页码：397-400
- 全文大小：41 KB
- 刊物类别：Engineering
- 刊物主题：Electronic and Computer Engineering
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1608-3415
文摘
It is shown that structure–impurity and electrophysical parameters of the Si/SiO2 system can be stabilized by annealing the system in a halogen-containing atmosphere after thermal oxidation of Si. The underlying physicochemical ideas are represented in the form of a general (application-independent) mathematical model.