Growth and characterization of HfO2 high-k gate dielectric films by laser molecular beam epitaxy (LMBE)

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• 作者：Y. K. Lu ; X. F. Chen ; W. Zhu and R. Gopalkrishnan
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2006
• 出版时间：September, 2006
• 年：2006
• 卷：17
• 期：9
• 页码：685-688
• 全文大小：235 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

The HfO₂ gate dielectric films were fabricated by the laser molecular beam epitaxy (LMBE) technique. High-resolution transmission electron microscopy (HRTEM) observation showed that under optimized condition, there is no detectable SiO₂ interfacial layer in the as-deposited film and a SiO₂ interfacial layer of about 0.4 nm was formed at the Si interface due to the post deposition annealing. Capacitance–voltage (C–V) measurement of the film revealed that the equivalent oxide thickness was about 1.3 nm. Such a film showed very low leakage current density of 1.5 × 10?2 A cm?2 at 1 V gate bias from the current–voltage (I–V) analysis. The conduction mechanisms as a function of temperature T and electric field E were also systematically studied.