Structural, optical and electrical properties of cubic AlN films deposited by laser molecular beam epitaxy

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• 作者：Yuechun Fu (1) fuyuechun@126.com
  Xuefei Li (1)
  Yunyun Wang (1)
  Huan He (1)
  Xiaoming Shen (1)
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2012
• 出版时间：March 2012
• 年：2012
• 卷：106
• 期：4
• 页码：937-940
• 全文大小：374.4 KB
• 参考文献：1. I. Petrov, E. Mojab, R.C. Powell, J.E. Greene, L. Hultman, J.E. Sundgren, Appl. Phys. Lett. 60, 2491 (1992)
  2. M.P. Thompson, G.W. Auner, A.R. Drews, J. Electron. Mater. 10, L17 (1999)
  3. L.D. Wang, H.S. Kwok, Appl. Surf. Sci. 154–155, 439 (2000)
  4. M. Shahien, M. Yamada, T. Yasui, M. Fukumoto, J. Therm. Spray Technol. 19, 635 (2010)
  5. Z.M. Ren, Y.F. Lu, H.Q. Ni, J. Appl. Phys. 88, 7346 (2000)
  6. S. Mohri, T. Yoshitake, T. Hara, K. Nagayama, Diam. Relat. Mater. 17, 1796 (2008)
  7. S. Okubo, N. Shibata, T. Saito, Y. Ikuhara, J. Cryst. Growth 189–190, 452 (1998)
  8. M. R枚ppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As, J. Appl. Phys. 106, 076104 (2009)
  9. G. Shukla, A. Khare, Appl. Surf. Sci. 255, 2057 (2008)
  10. Y.K. Ke, H.R. Dong, Handbook of Chemical Analysis (Chemical Industry Press, Beijing, 1998)
  11. L.I. Wei, C.J. Fang, Appl. Surf. Sci. 253, 7019 (2007)
  12. M. Bernard, A. Deneuville, O. Thomas, P. Gergaud, P. Sandstrom, J. Birch, Thin Solid Films 380, 252 (2000)
  13. C. Ristoscu, C. Ducu, G. Socol, F. Craciunoiu, I.N. Mihailescu, Appl. Surf. Sci. 248, 411 (2005)
  14. J. Baek, J. Ma, M.F. Becker, J.W. Keto, D. Kovar, Thin Solid Films 515, 7096 (2007)
  15. P.E. Silva, P.R. De, L.C. Carvalho, Microelectron. J. 34, 721 (2003)
• 作者单位：1. Key Laboratory of New Processing Technology for Materials and Nonferrous Metals, Ministry of Education, College of Materials Science and Engineering, Guangxi University, Nanning, 530004 China
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Cubic AlN films were successfully deposited on TiN buffered Si (100) substrates by a laser molecular beam epitaxy (LMBE) technique, and their crystal structure and optical and electrical properties were studied. The results indicate that cubic AlN films show the NaCl-type structure with a (200) preferred orientation, and the lattice parameter is determined to be 0.4027 nm. The Fourier transform infrared (FTIR) pattern of the cubic AlN film displays sharp absorption peaks at 668 cm−1 and 951 cm−1, corresponding to the transverse and longitudinal optical vibration modes. Ellipsometric measurements evidence a refractive index of 1.66–1.71 and an extinction coefficient of about zero for the cubic AlN film in the visible range. Capacitance–voltage (C–V) traces of the metal–insulator–semiconductor (MIS) device exhibit that the cubic AlN film has a dielectric constant of 8.1, and hysteresis in the C–V traces indicates a significant number of charge traps in the film.