Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy

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• 作者：Dawei Yan (12) dawei.yan@hotmail.com
  Hong Zhang (1)
  Li Bai (2)
  Xuemin Wang (2)
  Weibin Zhang (12)
  Yuying Wang (2)
  Changle Shen (2)
  Liping Peng (2)
  Weidong Wu (2) wuweidongding@163.com
• 关键词：Key words Gd films – ; LMBE – ; initial oxidation – ; XPS – ; UPS
• 刊名：Journal of Wuhan University of Technology--Materials Science Edition
• 出版年：2012
• 出版时间：April 2012
• 年：2012
• 卷：27
• 期：2
• 页码：191-194
• 全文大小：267.1 KB
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• 作者单位：1. School of Physical Science and Technology, Sichuan University, Chengdu, 610065 China2. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 China
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Chinese Library of Science
  
• 出版者：Wuhan University, co-published with Springer
• ISSN：1993-0437

文摘

Gd thin films with different thickness (about 10 nm and 0.5 nm) were deposited on Si(100) by laser molecular beam epitaxy (LMBE). Thickness dependence of the initial oxidation behaviors of Gd films was studied based on the in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) analysis under ultra-high vacuum (UHV) condition. When the thin film is around 10 nm, the XPS results show that Gd is extremely reactive with oxygen forming Gd oxides and the oxides of Gd are easily hygroscopic. The UPS results show that the Gd 4f has a double-peak structure and the double-peak structure of Gd 4f evolves into a single-peak feature after exposing to air. When the thickness of the Gd film decreases to about 0.5 nm, the reactivity of Gd film with oxygen is decreased by the diffusion of Si component into Gd layers based on the XPS and UPS results. It is suggested that the silicon atoms segregate at the grain boundaries of Gd film to form a barrier, which block the further diffusion of oxygen and water vapor into the Gd layers.