PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
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- 作者：A. G. Khairnar ; V. S. Patil ; K. S. Agrawal ; R. S. Salunke ; A. M. Mahajan
- 刊名：Semiconductors
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：51
- 期：1
- 页码：131-133
- 全文大小：
- 刊物类别：Physics and Astronomy
- 刊物主题：Magnetism, Magnetic Materials; Physics, general;
- 出版者：Pleiades Publishing
- ISSN：1090-6479
- 卷排序：51
文摘
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°С. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.