Properties of ScxAl1-xN (x = 0.27) thin films on sapphire and silicon substrates upon high temperature loading

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• 作者：P. M. Mayrhofer ; P. O. Å. Persson ; A. Bittner ; U. Schmid
• 刊名：Microsystem Technologies
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：22
• 期：7
• 页码：1679-1689
• 全文大小：2,232 KB
• 刊物类别：Engineering
• 刊物主题：Electronics, Microelectronics and Instrumentation
  Nanotechnology
  Mechanical Engineering
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-1858
• 卷排序：22

文摘

Scandium Aluminum Nitride thin films (Sc_xAl_1-xN) are attracting more and more attention for micro-electromechanical systems (MEMS) because of significantly increased piezoelectric constants compared to pure AlN. This work provides a comprehensive study of thermal annealing effects on Sc_xAl_1-xN (x = 27 %) films synthesized via DC magnetron sputter deposition at nominally unheated Silicon and Sapphire substrates. Compared to the “as deposited” state increasing c-axis orientation and crystalline quality upon annealing up to 1000 °C of films with mixed crystallographic orientation is observed via X-ray diffraction and transmission electron microscopy based analyses. Also the piezoelectric coefficient d₃₃ of Sc_xAl_1-xN on Si shows increasing values at enhanced annealing temperatures. However, the improved piezoelectric properties are accompanied by both increased leakage currents and loss tangent values.