Ferroelectric, dielectric and leakage current properties of epitaxial (K,Na)NbO3-LiTaO3-CaZrO3 thin films
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- 作者：Yuan-Hang Li ; Feng Chen ; Guan-Yin Gao ; Hao-Ran Xu ; Wenbin Wu
- 关键词：Lead ; free piezoelectrics ; Epitaxial growth ; Thin films ; Dielectric properties
- 刊名：Journal of Electroceramics
- 出版年：2015
- 出版时间：June 2015
- 年：2015
- 卷：34
- 期：4
- 页码：249-254
- 全文大小：851 KB
- 参考文献：1.H.T.Y. Saito, T. Tani, T. Nanoyama, K. Takatori, T. Homma, T. Nagaya, M. Nakamura, Nature 432, 84 (2004)CrossRef
2.J. Fu, R. Zuo, S.C. Wu, J.Z. Jiang, L. Li, T.Y. Yang, X. Wang, L. Li, Appl Phys Lett 100, 122902 (2012)CrossRef
3.K. Wang, J.F. Li, N. Liu, Appl Phys Lett 93, 092904 (2008)CrossRef
4.B.Q. Ming, J.F. Wang, P. Qi, G.Z. Zang, J Appl Phys 101, 054103 (2007)CrossRef
5.N.T. Chua, L. You, J. Ma, J. Wang, Thin Solid Films 518, 6777 (2010)CrossRef
6.Y.B. Yao, H.T. Chan, C.L. Mak, K.H. Wong, Thin Solid Films 537, 156 (2013)CrossRef
7.S.T. Lau, X. Li, Q.F. Zhou, K.K. Shung, J. Ryu, D.S. Park, Sensors Actuators A Phys 163, 226 (2010)CrossRef
8.Y. Wakasa, I. Kanno, R. Yokokawa, H. Kotera, K. Shibata, T. Mishima, Sensors Actuators A Phys 171, 223 (2011)CrossRef
9.H.J. Lee, I.W. Kim, J.S. Kim, C.W. Ahn, B.H. Park, Appl Phys Lett 94, 092902 (2009)CrossRef
10.M. Abazari, E.K. Akdo?an, A. Safari, Appl Phys Lett 93, 192910 (2008)CrossRef
11.L. Wang, W. Ren, P. Shi, X. Chen, X. Wu, X. Yao, Appl Phys Lett 97, 072902 (2010)CrossRef
12.C.R. Cho, A. Grishin, J Appl Phys 87, 4439 (2000)CrossRef
13.C. Zaldo, D.S. Gill, R.W. Eason, J. Mendiola, P.J. Chandler, Appl Phys Lett 65, 502 (1994)CrossRef
14.M. Abazari, E.K. Akdo?an, A. Safari, J Appl Phys 103, 104106 (2008)CrossRef
15.M. Abazari, T. Choi, S.W. Cheong, A. Safari, J Phys D Appl Phys 43, 025405 (2010)CrossRef
16.P. Chin Goh, K. Yao, Z. Chen, Appl Phys Lett 99, 092902 (2011)CrossRef
17.G. Han, C.W. Ahn, J. Ryu, W.H. Yoon, J.J. Choi, B.D. Hahn, J.W. Kim, J.H. Choi, D.S. Park, Mater Lett 65, 2762 (2011)CrossRef
18.M. Abazari, A. Safari, J Appl Phys 105, 094101 (2009)CrossRef
19.M. Abazari, E.K. Akdo?an, A. Safari, Appl Phys Lett 92, 212903 (2008)CrossRef
20.M. Abazari, A. Safari, Appl Phys Lett 97, 262902 (2010)CrossRef
21.Y. Gao, J.L. Zhang, X.J. Zong, C.L. Wang, J.C. Li, J Appl Phys 107, 074101 (2010)CrossRef
22.J. Wu, D. Xiao, Y. Wang, W. Wu, B. Zhang, J. Zhu, J Appl Phys 104, 024102 (2008)CrossRef
23.S. Zhang, R. Xia, T.R. Shrout, Appl Phys Lett 91, 132913 (2007)CrossRef
24.K. Wang, F.Z. Yao, W. Jo, D. Gobeljic, V.V. Shvartsman, D.C. Lupascu, J.F. Li, J. R?del, Adv Funct Mater 23, 4079 (2013)CrossRef
25.S. Jin, G. Gao, W. Wu, X. Zhou, J Phys D Appl Phys 40, 305 (2007)CrossRef
26.A. Tian, W. Ren, L. Wang, H. Du, X. Yao, J Appl Phys 114, 134103 (2013)CrossRef
27.A. Tian, W. Ren, L. Wang, P. Shi, X. Chen, X. Wu, X. Yao, Appl Surf Sci 258, 2674 (2012)CrossRef
28.D.Y. Wang, D.M. Lin, K.W. Kwok, N.Y. Chan, J.Y. Dai, S. Li, H.L.W. Chan, Appl Phys Lett 98, 022902 (2011)CrossRef - 作者单位：Yuan-Hang Li (1)
Feng Chen (1)
Guan-Yin Gao (1)
Hao-Ran Xu (1)
Wenbin Wu (1)
1. High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, People’s Republic of China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Ceramics,Glass,Composites,Natural Materials
Characterization and Evaluation Materials
Electrochemistry
Crystallography - 出版者：Springer Netherlands
- ISSN：1573-8663
文摘
Epitaxial 0.95(Na0.49?K0.49Li0.02) (Nb0.8Ta0.2)-0.05CaZrO3 thin films were deposited under various oxygen pressures (15-5 Pa) and substrate temperatures (600-20 °C) on SrTiO3 (001) substrates using La0.7Sr0.3MnO3 as bottom electrodes. Their microstructures, ferroelectric and dielectric properties were intensively investigated with high-resolution X-ray diffraction (XRD), polarization- electric field hysteresis (P-E) measurements and leakage currents (I-V) characterizations. It is found that the lattice constant of the films increases with increasing deposition temperature, while it nearly keeps a constant even when the oxygen pressures are changed. The crystallinity of the films shows an increment with increasing oxygen partial pressure. Saturated P-E loops are obtained for all the films. The film fabricated with optimized parameters at 680 °C and 35 Pa displays a dielectric constant of 1185 at 1 kHz, a remnant polarization (2P r) of 28.0 μC/cm2 and a coercive field (2E c) of 165.4 kV/cm. I-V results revealed that the ohmic conduction, space charge limited current and Pool-Frenkel model came up as predominant transport mechanism in the films in turn with the increment of applied electric field. Keywords Lead-free piezoelectrics Epitaxial growth Thin films Dielectric properties