Multilayer graphene-based flash memory

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• 作者：Yu. N. Novikov ; V. A. Gritsenko ; G. Ya. Krasnikov ; O. M. Orlov
• 刊名：Russian Microelectronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：45
• 期：1
• 页码：63-67
• 全文大小：348 KB
• 参考文献：1.Hong, A.J., Song, K.B., Yu, H.S., Allen, M.J., Kim, J., Fowler, J.D., Wassei, J.K., Park, Y., Wang, Y., Zou, J., Kaner, R.B., Weiller, B.H., and Wang, K.L., Graphene flash memory, ACS Nano, 2011, vol. 5, pp. 7812–7817.CrossRef
  2.Gritsenko, V.A., Nasyrov, K.A., Gritsenko, D.V., Novikov, Yu.N., Aseev, A.L., Li, D.Kh., Li, D.-V., and Kim, Ch.V., A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read only memory, Semiconductor, 2005, vol. 39, pp. 716–721.CrossRef
  3.Song, S.M., Park, J.K., Sul, O.J., and Cho, B.J., Determination of work function of graphene under a metal electrode and its role in contact resistance, Nano Lett., 2012, vol. 12, pp. 3887–3892.CrossRef
  4.http://infotables.ru/fizika/132-rabota-vykhoda-elektronov-iz-inetallov-tablitsa
  
• 作者单位：Yu. N. Novikov (1)
  V. A. Gritsenko (1) (2)
  G. Ya. Krasnikov (3)
  O. M. Orlov (3)
  
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Moscow, Russia
  2. Novosibirsk State University, Novosibirsk, Moscow, Russia
  3. Scientific Research Institute of Molecular Electronics, Moscow, Russia
  
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1608-3415

文摘

For the memory element based on a Si/HfO₂/multilayer graphene/SiO₂/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices. Original Russian Text © Yu.N. Novikov, V.A. Gritsenko, G.Ya. Krasnikov, O.M. Orlov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 1, pp. 66–71.