Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering
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  • 作者:M. Brunclíková ; Z. Hubi?ka ; ?. Kment ; J. Olejní?ek…
  • 关键词:WO3 thin films ; Water splitting ; Pulsed magnetron sputtering ; Photoelectrochemistry
  • 刊名:Research on Chemical Intermediates
  • 出版年:2015
  • 出版时间:December 2015
  • 年:2015
  • 卷:41
  • 期:12
  • 页码:9259-9266
  • 全文大小:656 KB
  • 参考文献:1.S.U.M. Khan, M. Al-Shahry, W.B. Ingler, Science 297, 2243 (2002)CrossRef
    2.S. Kment, Z. Hubicka, J. Krysa, J. Olejnicek, M. Cada, I. Gregora, M. Zlamal, M. Brunclikova, Z. Remes, N. Liu, L. Wang, R. Kirchgeorg, C.Y. Lee, P. Schmuki, Catal. Today 230, 8 (2014)CrossRef
    3.M. Green, W.C. Smith, J.A. Weiner, Thin Solid Films 38, 89 (1976)CrossRef
    4.M. Nagasu, N. Koshida, Appl. Phys. Lett. 57, 1324 (1990)CrossRef
    5.S. Reich, G. Leitus, R. Popovitz-Biro, A. Goldbourt, S. Vega, J. Supercond. Nov. Magn. 22, 343 (2009)CrossRef
    6.A. Aird, E.K.H. Salje, J. Phys. Condens. Matter 10, L377 (1998)CrossRef
    7.K. Ito, T. Ohgami, Appl. Phys. Lett. 60, 938 (1992)CrossRef
    8.G.W. Ho, K.J. Chua, D.R. Siow, Chem. Eng. J. 181, 661 (2012)CrossRef
    9.J.M. Foley, M.J. Price, J.I. Feldblyum, S. Maldonado, Energy Environ. Sci. 5, 5203 (2012)CrossRef
    10.X. Liu, F.Y. Wang, Q. Wang, Phys. Chem. Chem. Phys. 14, 7894 (2012)CrossRef
    11.P.T. Hsiao, L.C. Chen, T.L. Li, H.S. Teng, J. Mater. Chem. 21, 19402 (2011)CrossRef
    12.D.D. Qin, C.L. Tao, S.A. Friesen, T.H. Wang, O.K. Varghese, N.Z. Bao, Z.Y. Yang, T.E. Mallouk, C.A. Grimes, Chem. Commun. 48, 729 (2012)CrossRef
    13.H. Ishihara, G.K. Kannarpady, K.R. Khedir, J. Woo, S. Trigwell, A.S. Biris, Phys. Chem. Chem. Phys. 13, 19553 (2011)CrossRef
    14.H.D. Zheng, A.Z. Sadek, K. Latham, K. Kalantar-Zadeh, Electrochem. Commun. 11, 768 (2009)CrossRef
    15.B. Marsen, E.L. Miller, D. Paluselli, R.E. Rocheleau, Int. J. Hydrog. Energy 32, 3110 (2007)CrossRef
    16.X.H. Zhang, X.H. Lu, Y.Q. Shen, J.B. Han, L.Y. Yuan, L. Gong, Z. Xu, X.D. Bai, M. Wei, Y.X. Tong, Y.H. Gao, J. Chen, J. Zhou, Z.L. Wang, Chem. Commun. 47, 5804 (2011)CrossRef
    17.K. Sivula, F. Le Formal, M. Gratzel, Chem. Mater. 21, 2862 (2009)CrossRef
    18.Y. Sun, C.J. Murphy, K.R. Reyes-Gil, E.A. Reyes-Garcia, J.M. Thornton, N.A. Morris, D. Raftery, Int. J. Hydrog. Energy 34, 8476 (2009)CrossRef
    19.J.A. Seabold, K.S. Choi, Chem. Mater. 23, 1105 (2011)CrossRef
    20.S. Kment, P. Kluson, V. Stranak, P. Virostko, J. Krysa, M. Cada, J. Pracharova, M. Kohout, M. Morozova, P. Adamek, Z. Hubicka, Electrochim. Acta 54, 3352 (2009)CrossRef
    21.S. Kment, P. Kluson, Z. Hubicka, J. Krysa, M. Cada, I. Gregora, A. Deyneka, Z. Remes, H. Zabova, L. Jastrabik, Electrochim. Acta 55, 1548 (2010)CrossRef
    22.M.A. Sobolewski, Appl. Phys. Lett. 72, 1146 (1998)CrossRef
    23.T. Zhu, M.N. Chong, E.S. Chan, ChemSusChem 7, 2974 (2014)CrossRef
  • 作者单位:M. Brunclíková (1)
    Z. Hubi?ka (2)
    ?. Kment (2)
    J. Olejní?ek (2)
    M. ?ada (2)
    P. K?írová (2)
    J. Krysa (1)

    1. Department of Inorganic Technology, University of Chemical Technology Prague, Technická 5, 16628, Prague, Czech Republic
    2. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 14800, Prague, Czech Republic
  • 刊物类别:Chemistry and Materials Science
  • 刊物主题:Chemistry
    Catalysis
    Physical Chemistry
    Inorganic Chemistry
  • 出版者:Springer Netherlands
  • ISSN:1568-5675
文摘
WO3 crystalline semiconductor thin films for water-splitting applications were prepared by pulsed unbalanced reactive magnetron sputtering with W target and Ar + O2 gas mixture. Postdeposition annealing at temperature of 450 °C was applied to the WO3 samples to improve their crystallinity and semiconductor properties. Various pulsing modes were tested in deposition experiments with different pulsing frequencies, discharge power applied in pulse, and average applied power. To determine the influence of the plasma parameters on the deposition process, the pulsed and average ion flux density on the substrate were measured using an ion probe. The WO3 films had monoclinic crystalline structure after the annealing process. Different crystallite orientations were found for different modes of discharge pulsing. Preferential orientation of the (200) plane parallel to the substrate surface was identified for higher frequency of discharge pulsing with lower substrate pulsed ion flux but higher average substrate ion flux. The WO3 films with this type of texture had the highest photocurrents in photoelectrochemical (PEC) measurements. Keywords WO3 thin films Water splitting Pulsed magnetron sputtering Photoelectrochemistry

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