Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC(0001)

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• 作者：Debora Pierucci (1)
  Haikel Sediri (1)
  Mahdi Hajlaoui (1) (2)
  Emilio Velez-Fort (1) (3)
  Yannick J. Dappe (4)
  Mathieu G. Silly (2)
  Rachid Belkhou (2)
  Abhay Shukla (3)
  Fausto Sirotti (2)
  Noelle Gogneau (1)
  Abdelkarim Ouerghi (1)
  
  1. CNRS-Laboratoire de Photonique et de Nanostructures ; Route de Nozay ; 91460 ; Marcoussis ; France
  2. Synchrotron-SOLEIL ; Saint-Aubin ; BP48 ; F91192 ; Gif sur Yvette Cedex ; France
  3. Universit茅 Pierre et Marie Curie (CNRS - IMPMC) ; 4 Pl. Jussieu ; 75005 ; Paris ; France
  4. Service de Physique de l鈥橢tat Condens茅 (CNRS URA2464) ; IRAMIS ; CEA Saclay ; 91191 ; Gif-Sur-Yvette ; France
  
• 关键词：epitaxial graphene layer ; monolayer ; bilayer ; band gap opening ; Bernal stacking ; off ; axis silicon carbide ; electronic properties
• 刊名：Nano Research
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：8
• 期：3
• 页码：1026-1037
• 全文大小：2,208 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

The remarkable properties of graphene have shown promise for new perspectives in future electronics, notably for nanometer scale devices. Here we grow graphene epitaxially on an off-axis 4H-SiC(0001) substrate and demonstrate the formation of periodic arrangement of monolayer graphene on planar (0001) terraces and Bernal bilayer graphene on \((11\bar 20)\) nanofacets of SiC. We investigate these lateral superlattices using Raman spectroscopy, atomic force microscopy/electrostatic force microscopy (AFM/EFM) and X-ray and angle resolved photoemission spectroscopy (XPS/ARPES). The correlation of EFM and ARPES reveals the appearance of permanent electronic band gaps in AB-stacked bilayer graphene on \((11\bar 20)\) SiC nanofacets of 150 meV. This feature is confirmed by density functional theory (DFT) calculations. The charge transfer between the substrate and graphene bilayer results in an asymmetric charge distribution between the top and the bottom graphene layers opening an energy gap. This surface organization can be thus defined as self-organized metal-semiconductor graphene.