On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C)
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- 作者：V. M. Andreev ; D. A. Malevskiy ; P. V. Pokrovskiy ; V. D. Rumyantsev…
- 刊名：Semiconductors
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：50
- 期：10
- 页码：1356-1361
- 全文大小：511 KB
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Magnetism and Magnetic Materials
Electromagnetism, Optics and Lasers
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1090-6479
- 卷排序：50
文摘
This study is aimed at investigating the main photoelectric characteristics of three-cascade InGaP/InGaAs/Ge photoelectric converters in a broad temperature range (–197°C ≤ T ≤ +85°C). On account of analysis of photosensitivity spectra and optical current–voltage characteristics, such temperature dependences as the open-circuit voltage (Voc), filling factor of the current–voltage characteristic (FF), and the photoelectric conversion efficiency of solar radiation are determined. Investigations are performed at illumination intensities corresponding to operation under concentrated radiation. Decreased temperatures facilitate the selection of samples with the minimal “parasitic” potential barriers. The influence of excitationtransfer processes from a cascade into a cascade is estimated by means of secondary luminescent radiation. The highest photoelectric conversion efficiency of 52% is measured at a concentration multiplicity of 100 “suns” and a temperature of–160°C.