On some problems of modeling the distributions of minority charge carriers generated by an electron beam in a semiconductor material

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• 作者：E. V. Seregina ; M. A. Stepovich…
• 刊名：Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：10
• 期：2
• 页码：445-449
• 全文大小：334 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Surfaces and Interfaces and Thin Films
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1819-7094
• 卷排序：10

文摘

The results of estimating different projection approximation schemes (a modified least-squares method and the Galerkin and Ritz methods) are presented. They are used to simulate the distribution of minority charge carriers, which is observed as a result of the diffusion of minority charge carriers generated by a broad electron beam in a homogeneous semiconductor material. Certain computational features of the implementation of the considered methods are considered.Keywordssemiconductorbroad electron beamminority-charge-carrier distributionprojection approximation