Investigation of fused silica glass etching using C4F8/Ar inductively coupled plasmas for through glass via (TGV) applications
详细信息 查看全文
- 作者：Laicun Lin ; Xiangmeng Jing ; Qidong Wang ; Feng Jiang…
- 刊名：Microsystem Technologies
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：22
- 期：1
- 页码：119-127
- 全文大小：1,448 KB
- 参考文献：Abdolahad M, Nilchi JN, Mohajerzadeh S (2010) Fluorine-free high-resolution selective plasma etching of silicon-oxide layers on silicon substrates. J Phys D Appl Phys 43(39):395402CrossRef
Ahamed MJ, Senkal D, Trusov AA et al (2013) Deep NLD plasma etching of fused silica and borosilicate glass. Sensors, 2013 IEEE. IEEE, 2013, pp 1–4
Akashi T, Yoshimura Y (2006) Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask. J Micromech Microeng 16:1051–1056CrossRef
Anthony CJ, Docker PT, Prewett PD et al (2007) Focused ion beam microfabrication in Foturan™ photosensitive glass. J Micromech Microeng 17(1):115CrossRef
Baram A, Naftali M (2006) Dry etching of deep cavities in Pyrex for MEMS applications using standard lithography. J Micromech Microeng 16(11):2287CrossRef
Bertz A, Fendler R, Schuberth R, Hentsch W, Gessner T (2007) A new method for high rate deep dry etching of silicate glass with variable etch profile. The 14th international conference on solid-state sensors, actuators and microsystems, Lyon, France, June 10–14, 2007
Esashi M (2008) Wafer level packaging of MEMS. J Micromech Microeng 18(7):073001CrossRef
Haque RUM, Wise KD (2013) A glass-in-silicon reflow process for three-dimensional microsystems. J Microelectromech Syst 22(6):1470–1477CrossRef
Ichiki T, Sugiyama Y, Ujiie T et al (2003) Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for microelectromechanical system fabrication. J Vac Sci Technol B 21(5):2188–2192CrossRef
Jin JY, Yoo S, Bae JS et al (2014) Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask. J Micromech Microeng 24(1):015003CrossRef
Keech J, Chaparala S, Shorey A et al (2013) Fabrication of 3D-IC interposers, electronic components and technology conference (ECTC). In: 2013 IEEE 63rd. IEEE, 2013, pp 1829–1833
Kim C, Yoon YK (2013) High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging, electronic components and technology conference (ECTC), 2013 IEEE 63rd. IEEE, 2013, pp 1385–1391
Kolari K, Saarela V, Franssila S (2008) Deep plasma etching of glass for fluidic devices with different mask materials. J Micromech Microeng 18(6):064010CrossRef
Lai WC, Chuang HH, Tsai CH et al (2013) 300 mm size ultra-thin glass interposer technology and high-Q embedded helical inductor (EHI) for mobile application, electron devices meeting (IEDM), 2013 IEEE International. IEEE, 2013, pp 13.4.1–13.4. 4
Lallement L, Gosse C, Cardinaud C et al (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: implications for microfluidic devices fabrication. J Vac Sci Technol A 28(2):277–286CrossRef
Lau JH (2011) Evolution, challenge, and outlook of tsv, 3D IC integration and 3D silicon integration, advanced packaging materials (APM), 2011 international symposium on IEEE, 2011, pp 462–488
Lee JY, Lee SW, Lee SK et al (2013a) Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging. J Micromech Microeng 23(8):085012CrossRef
Lee JY, Lee SW, Lee SK et al (2013b) Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging. J Micromech Microeng 23(8):085012CrossRef
Li X, Abe T, Esashi M (2001) Deep reactive ion etching of Pyrex glass using SF6 plasma. Sens Actuators A: Phys 87(3):139–145CrossRef
Li X, Abe T, Liu Y et al (2002) Fabrication of high-density electrical feed-throughs by deep-reactive-ion etching of Pyrex glass. J Microelectromech Syst 11(6):625–630CrossRef
Nicolas S, Caplet S, Greco F et al (2012) 3D MEMS high vacuum wafer level packaging, electronic components and technology conference (ECTC), 2012 IEEE 62nd. IEEE, 2012, pp 370–376
Park JH et al (2005) Continuous and cyclic deep reactive ion etching of borosilicate glass by using SF6 and SF6/Ar inductively coupled plasmas. J Korean Phys Soc 47:422–428
Qin X, Gottschall S, Kumbhat N et al (2013) Large silicon, glass and low CTE organic interposers to printed wiring board SMT interconnections using copper microwire arrays, electronic components and technology conference (ECTC), 2013 IEEE 63rd. IEEE, 2013, pp 867–871
Rauf S, Ventzek PLG (2002) Model for an inductively coupled Ar/c-C4F8 plasma discharge. J Vac Sci Technol A: Vac Surf Films 20(1):14–23CrossRef
Sukumaran V, Chen Q, Liu F et al (2010) Through-package-via formation and metallization of glass interposers, electronic components and technology conference (ECTC), In: 2010 Proceedings 60th. IEEE, 2010, pp 557–563
Sukumaran V, Bandyopadhyay T, Chen Q et al (2011) Design, fabrication and characterization of low-cost glass interposers with fine-pitch through-package-vias, electronic components and technology conference (ECTC), In: 2011 IEEE 61st. IEEE, 2011, pp 583–588
Takahashi S, Horiuchi K, Tatsukoshi K et al (2013) Development of through glass via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging, electronic components and technology conference (ECTC), 2013 IEEE 63rd. IEEE, 2013, pp 348–352
Topper M, Ndip I, Erxleben R et al (2010) 3-D thin film interposer based on TGV (through glass vias): An alternative to Si-interposer, electronic components and technology conference (ECTC), In: 2010 Proceedings 60th. IEEE, 2010, pp 66–73
Tummala RR, Sundaram V, Chatterjee R et al (2009) Trend from ICs to 3D ICs to 3D systems, custom integrated circuits conference, 2009. CICC’09, IEEE. IEEE, 2009, pp 439–444
Zeze DA, Carey JD, Stolojan V et al (2006) Damage effects in Pyrex by CF4 reactive ion etching in dual RF-microwave plasmas. Micro Nano Lett 1(2):103–107CrossRef - 作者单位：Laicun Lin (1)
Xiangmeng Jing (1) (2)
Qidong Wang (1) (2)
Feng Jiang (2)
Liqiang Cao (1) (2)
Daquan Yu (1)
1. Institute of Microelectronics of Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Beijing, 100029, China
2. National Center for Advanced Packaging (NCAP), Wuxi, 214135, Jiangsu, China - 刊物类别：Engineering
- 刊物主题：Electronics, Microelectronics and Instrumentation
Nanotechnology
Mechanical Engineering
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-1858
文摘
Through glass via (TGV) technology is considered to be a cost effective enabler for the integration of micro electromechanical systems and radio frequency devices. Inductively coupled plasma and Bosch etching process comprise one of the most pervasive methods for through silicon via (TSV) formation. Unfortunately an equivalent process for glass etching remains elusive. In this paper, the influence of plasma etching for fused silica glass were investigated to find the best tradeoff between etch rate and profile of TGVs. The process parameters including bias power, gas flow rate, ratio of etching gases and reaction chamber pressure using Ar/C4F8 inductively coupled plasmas were studied. The etching results show that all these three parameters have a significant impact on the etch rate. Furthermore, the adjustment including total flow rate and ratio of Ar/C4F8 and chamber pressure can be used to control the via profile. Constant fused silica glass etch rate greater than 1 μm/min was obtained when chiller temperature was 40 °C with etching time of 60 min. The profile angle of TGVs with nearly 90° was also achieved.