Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

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• 作者：A. E. Marichev ; R. V. Levin ; A. B. Gordeeva ; G. S. Gagis…
• 刊名：Technical Physics Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：88-91
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Classical and Continuum Physics;
• 出版者：Pleiades Publishing
• ISSN：1090-6533
• 卷排序：43

文摘

Specific features of mechanical-stress relaxation in InGaAsP/InP heterostructures for 1064 nm laser radiation converters have been studied. It is established that stress relaxation via the formation of an ordered relief on the surface of solid-solution layers in InGaAsP/InP heterostructures with indium content up to 80% can decrease the probability of spinodal decomposition of the solid solution, enhance its photoluminescence intensity, and increase the efficiency of laser-radiation conversion.