Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

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• 作者：JIWEN XU ; ZUPEI YANG ; YUPEI ZHANG ; XIAOWEN ZHANG ; HUA WANG
• 关键词：ZnMn2O4 ; bipolar ; resistive switching ; chemical solution deposition
• 刊名：Bulletin of Materials Science
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：37
• 期：7
• 页码：1657-1661
• 全文大小：958 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Engineering, general
  
• 出版者：Springer India
• ISSN：0973-7669

文摘

ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.