MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

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• 作者：Munseon Jang ; Kwang-Seok Yun
• 关键词：Pressure sensor ; Capacitive sensor ; Post ; CMOS ; MEMS sensor ; CMOS MEMS
• 刊名：Micro and Nano Systems Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：5
• 期：1
• 全文大小：1560KB
• 刊物主题：Circuits and Systems; Electrical Engineering; Mechanical Engineering; Nanotechnology; Applied and Technical Physics;
• 出版者：Springer Berlin Heidelberg
• ISSN：2213-9621
• 卷排序：5

文摘

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100–400 kPa.