Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors

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• 作者：Yuan Chang ; Di Wu ; Tingting Xu ; Zhifeng Shi…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1720-1725
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Nitrogen-doped p-type ZnTe nanowires were successfully synthesized by a chemical vapor deposition method. Schottky junctions based on Au/ZnTe NW/In structure were constructed and their device performances were studied. ZnTe/In Schottky junction devices show excellent rectifying characteristics with rectification ratio up to 103 within ±5 V. Photoresponse analysis reveals that such devices were highly sensitive to varying optical signal with excellent stability, reproducibility and fast response speeds of 69/120 μs. These results demonstrate that ZnTe/In Schottky junction devices will promote the applications of ZnTe 1D nanostructures in electronic and optoelectronics.