Effect of pressure on the intermediate-valence semiconductor SmB6: 11B-NMR

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• 作者：Kohei Nishiyama (11161)
  Takeshi Mito (11161)
  Ko-ichi Ueda (11161)
  Takehide Koyama (11161)
  Takao Kohara (11161)
  Gabriel Pristá? (21161)
  Slavomír Gabáni (21161)
  Marián Reiffers (21161)
  Karol Flachbart (21161)
  Yasuhiro Komaki (31161)
  Mitsutane Kokubu (31161)
  Hideto Fukazawa (31161)
  Yoh Kohori (31161)
  Nao Takeshita (41161)
  Natalia Shitsevalova (51161)
  
• 关键词：SmB6 ; NMR intermediate valence ; Kondo insulator ; Pressure
• 刊名：Journal of the Korean Physical Society
• 出版年：2013
• 出版时间：July 2013
• 年：2013
• 卷：62
• 期：12
• 页码：2024-2027
• 全文大小：162KB
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• 作者单位：Kohei Nishiyama (11161)
  Takeshi Mito (11161)
  Ko-ichi Ueda (11161)
  Takehide Koyama (11161)
  Takao Kohara (11161)
  Gabriel Pristá? (21161)
  Slavomír Gabáni (21161)
  Marián Reiffers (21161)
  Karol Flachbart (21161)
  Yasuhiro Komaki (31161)
  Mitsutane Kokubu (31161)
  Hideto Fukazawa (31161)
  Yoh Kohori (31161)
  Nao Takeshita (41161)
  Natalia Shitsevalova (51161)
  
  11161. Graduate School of Material Science, University of Hyogo, Ako-gun, Hyogo, 678-1297, Japan
  21161. Institute of Experimental Physics, Slovak Academy of Science, Watsonova 47, 04001, Ko?ice, Slovakia
  31161. Department of Physics, Graduate School of Science, Chiba University, Chiba, 263-8522, Japan
  41161. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8562, Japan
  51161. Institute for Problem of Material Science, National Academy of Science of Ukraine, Krzhyzhanovsky Str. 3, 03680, Kiev, Ukraine
  
• ISSN：1976-8524

文摘

We report the first high-pressure 11B-NMR studies above 3 GPa on the intermediate-valence semiconductor SmB6. A 11B-NMR line obtained at 4.9 GPa, the highest pressure for the measurements, and at 1.9 K shows quite similar a line shape to that at ambient pressure, indicating no structural or magnetic phase transition up to this pressure. The temperature dependence of the spin lattice relaxation rate 1/T 1 at 4.9 GPa still exhibits an activation-type temperature dependence characteristic of semiconductors, which reveals an obvious decrease in the insulating gap by about 30% compared to the gap at ambient pressure. The present experimental facts of a finite insulator gap and no magnetic order at 4.9 GPa are consistent with recent transport measurements performed under better hydrostatic pressures.