Microstructure and Electron Energy-Loss Spectroscopy Analysis of Interface Between Cu Substrate and Al2O3 Film Formed by Aerosol Deposition Method

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• 作者：Kazuaki Naoe (1)
  Masashi Nishiki (1)
  Keishi Sato (2)
  
• 关键词：aerosol deposition method ; alumina ; bonding mechanism ; electron energy ; loss spectroscopy ; metal ; ceramic interface
• 刊名：Journal of Thermal Spray Technology
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：23
• 期：8
• 页码：1333-1338
• 全文大小：1,500 KB
• 参考文献：1. J. Akedo, Room Temperature Impact Consolidation (RTIC) of Fine Ceramic Powder by Aerosol Deposition Method and Applications to Microdevices, / J. Therm. Spray Technol., 2008, 17(2), p 181-198 CrossRef
  2. W.-H. Yoon, J. Ryu, J.-J. Choi, B.-D. Hahn, J.H. Choi, B.-K. Lee, J.-H. Cho, and D.-S. Park, Enhanced Thermoelectric Properties of Textured Ca₃Co₄O₉ Thick Film by Aerosol Deposition, / J. Am. Ceram. Soc., 2010, 93(8), p 2125-2127 CrossRef
  3. Y.-H. Kim, H.-J. Kim, J.-H. Koh, J.-G. Ha, Y.-H. Yun, and S.-M. Nam, Fabrication of BaTiO₃-PTFE Composite Film for Embedded Capacitor Employing Aerosol Deposition, / Ceram. Int., 2011, 37, p 1859-1864 CrossRef
  4. J. Akedo and M. Lebedev, Microstructure and Electrical Properties of Lead Zirconate Titanate (Pb(Zr₅₂/Ti₄₈)O₃)) Thick Films Deposited by Aerosol Deposition Method, / Jpn. J. Appl. Phys., 1999, 38, p 5397-5401 CrossRef
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  11. R. Sakamaki, T. Hoshina, H. Kakemoto, K. Yasuda, H. Takeda, J. Akedo, and T. Tsurumi, Heat-Cycle Endurance and in-Plane Thermal Expansion of Al₂O₃/Al Substrate Formed by Aerosol Deposition Method, / J. Ceram. Soc. Jpn., 2008, 116(12), p 1299-1303 CrossRef
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• 作者单位：Kazuaki Naoe (1)
  Masashi Nishiki (1)
  Keishi Sato (2)
  
  1. Yokohama Research Laboratory, Hitachi, Ltd., Yokohama, Japan
  2. Information & Telecommunication Systems Company, Hitachi, Ltd., Tokyo, Japan
  
• ISSN：1544-1016

文摘

Aerosol deposition method is a technique to form dense films by impacting solid particles on a substrate at room temperature. To clarify the bonding mechanism between AD films and substrates, TEM observation and electron energy-loss spectroscopy (EELS) analysis of the interface between Al2O3 AD films and Cu substrates were conducted. The Al2O3 film was directly adhered to the Cu substrate without any void or crack. The film was composed of randomly oriented α-Al2O3 crystal grains of about 10-20?nm large. At the Al2O3/Cu interface, the lattice fringes of the film were recognized, and no interfacial layer with nanometer-order thickness could be found. EELS spectra near O-K edge obtained at the interface had the pre-peak feature at around 528?eV. According to previously reported experiments and theoretical calculations, this suggests interactions between Cu and O in Al2O3 at the interface. It is inferred that not only the anchoring effect but also the ionic bonding and covalent bonding that originates from the Cu-O interactions contribute to the bonding between Al2O3 AD films and Cu substrates.