CdS-Free p-Type Cu₂ZnSnSe₄/Sputtered n-Type In _x Ga_1−x N Thin Film Solar Cells

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• 作者：Wei-Liang Chen ; Dong-Hau Kuo ; Thi Tran Anh Tuan
• 关键词：Cu2ZnSnSe4 ; InGaN ; thin film solar cells ; sputtering
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：46
• 期：3
• 页码：1481-1487
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

Cu₂ZnSnSe₄ (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu–Zn–Sn metal target, followed by two-step post-selenization at 500–600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In_0.15Ga_0.85N/GaN/CZTSe and In_0.15Ga_0.85N/In_0.3Ga_0.7N/CZTSe. The p-type CZTSe and the n-type In_xGa_1−xN films were characterized. The properties of CZTSe changed with the selenization temperature and the In_xGa_1−xN with its indium content. With the CdS-free modeling for a solar cell structure, the In_0.15Ga_0.85N/In_0.3Ga_0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ∼48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.